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  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2706
DESCRIPTION With TO-3P(I) package High power dissipation APPLICATIONS For audio power amplifier and general purpose applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg

PARAMETER
CHA IN
Collector current Base current
Collector-base voltage
Collector-emitter voltage
E SEM NG
Open emitter
OND IC
CONDITIONS
TOR UC
VALUE 140 140 5 10 2
UNIT V V V A A W ae ae
Open base Open collector
Emitter-base voltage
Total power dissipation Junction temperature Storage temperature
TC=25ae
100 150 -55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=25mA ,IB=0 IE=1mA ,IC=0 IC=5A; IB=0.5A VCB=140V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IC=1A ; VCE=5V 55 35 MIN 140 5
2SC2706
SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT
TYP.
MAX
UNIT V V
2.0 10 10 160 |I |I
V A A

CHA IN
E SEM NG
OND IC
TOR UC
90
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2706

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions(unindicated tolerance:A
0.10 mm)
3


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